BD181 TRANSISTOR BJT NPN TO3

Type Designator: BD181
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 78 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3